The working principle of the semiconductor discharge tube or many people is not very understanding, so the integrity of the working principle of the semiconductor discharge tube in the end is how? The semiconductor arrester main process is what kind of? Today from the electronic technology small for the majority of friends to answer what puzzles!
The 1 semiconductor discharge tube:
Semiconductor overvoltage protection device is a new type of protection device according to the injection production technology of silicon controlled principle by ion conduction, with precise and fast response (NS response time), absorptive capacity, strong surge characteristics of higher reliability, bidirectional symmetry.
Due to its surge current capacity is stronger than the same size of the TVS tube can be used in the passive circuit instead of TVS tube. But its turn-on characteristic is close to the short circuit, which can not be directly used in the active circuit. When the circuit is used, it must be added with the current limiting element. Semiconductor overvoltage protection device is mounted, in-line and axial lead type three package form. 2.TSS working principle:
The semiconductor arrester also solid discharge tube is a PNP element, when the applied voltage is lower than the off state voltage when the device is in off state; when the voltage exceeds off its peak voltage, the semiconductor arrester will turn voltage transient voltage clamped to the element; the voltage continues to increase, due to the negative semiconductor discharge tube resistance effect into conduction, then almost short circuit; when the voltage is normal, the current can be decreased and lower than that of maintaining current fast components automatically reset and restore to a high impedance state. Reverse working state (K end is connected to positive, A negative) positive working state (A end connect positive, K negative)
Block: at this time the device at both ends of the voltage is lower than the breakdown voltage, J1 positive bias, J2 for the reverse bias, the current is very small, the role of blocking the current, plus the voltage almost all added to the J2.
Avalanche area: when the applied voltage rise close to the avalanche breakdown voltage of J2 junction, the reverse biased J2 junction space charge region width expansion at the same time, the electric field in the junction region is greatly enhanced, thus causing the multiplier effect to strengthen. As a result, the current through the J2 junction suddenly increases, and the current flow through the device is also increased, which is the voltage increase, a sharp increase in the current avalanche area.
The negative resistance region: when the applied voltage is increased to more than VBO, the avalanche multiplication effect produced a large number of electron hole pairs, then these carriers in the strong field under the action of electrons into the N2 area, the hole into the P1 area, because it is not a fast composite were piled up, so as to narrow the space charge region J2. Thus, the potential of P1 and the potential of N2 decreased, and the effect of the external voltage was offset. With the weakening of the electric field in the J2 junction region, the external voltage drop on the J2 junction will fall, and the avalanche effect will be weakened. On the other hand, the forward voltage of J1, J3 junction has been increased, the injection enhancement, resulting in the increase of the current through the J2 junction, so there is a negative resistance phenomenon of the current increase in voltage.
The low resistance state: as mentioned above, the avalanche effect of the J2 junction formed on both sides of the hole and electron accumulation caused by J2 reverse bias voltage is reduced; while the J1 and J3 node injection current increases, thus enhanced the J2 junction on both sides continue to charge accumulation, decreasing the junction voltage. When the voltage drops to the avalanche multiplication is completely stopped, and the junction voltage is completely canceled, the J2 junction is still provided with holes and electrons. At this point, J1, J2 and J3 are all positive bias, the device can pass a large current, so in the low resistance state area. When fully conducting, the volt ampere characteristic curve is similar to that of rectifier element.
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