TVS diodes, like other semiconductor products, have an inherent capacitance. The capacitance is dependent on junction area, doping concentration and voltage across the diode. The reverse bias voltage is inversely related to the device capacitance, as the reverse bias increases the capacitance of the device. As the doping concentration increases, the rated voltage of the diode is reduced, and the capacitance of the device is increased. On the other hand, devices with higher voltage values have smaller junction capacitance. Large joint area involves high current handling capability. However, as the size of the device or connection increases, the capacitance of the device increases along with it.
The characteristic of a capacitor is the low impedance of the signal with time varying. The higher the frequency of the signal, the lower the resistance to it. Thus, when a TVS diode is used in high data rate applications, the characteristic device capacitance tends to attenuate the signal. Therefore, the device is very large capacitance, the higher the frequency of the attenuation signal.
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